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PA2423L
RangeChargerTM 2.4 GHz Power Amplifier IC Final
Applications
Bluetoothtm wireless technology (Class 1) USB dongles PCMCIA, flash cards Access points 2.4GHz cordless telephone
Product Description
A monolithic, high-efficiency, silicon-germanium power amplifier IC, the PA2423L is designed for 2.4GHz wireless applications, including BluetoothTM Class1 and 2.4 GHz cordless telephone applications. It delivers +22.5 dBm output power with 45% power-added efficiency, making it capable of overcoming insertion losses of up to 2.5 dB between amplifier output and antenna input. The PA2423L contains an analog control input for improving PAE at reduced output power levels. The PA2423L provides a digital control input for controlling power up and power down modes of operation. An on-chip ramping circuit provides the turn-on/off switching of amplifier output with less than 3dB overshoot, meeting the BluetoothTM specification 1.1. The PA2423L operates at 3.3 V DC. At typical output power level (+22.5 dBm), its current consumption is 125 mA. The silicon/silicon-germanium structure of the PA2423L, and its exposed die-pad package, soldered to the system PCB, provide high thermal conductivity and a subsequently low junction temperature. This device is capable of operating at a duty cycle of 100 percent.
Features
+22.5 dBm at 45% Power Added Efficiency Low current 80 mA typical @ POUT = +20 dBm Temperature stability better than 1 dB over -40 C to +85 C Power-control and power-down modes 3.3 V single supply operation Small lead-free, plastic package: 6 lead QFN (1.6 mm x 3.0 mm)
Ordering Information
Part Number PA2423L PA2423L-R PA2423L-EV Package 6 Pin QFN 6 Pin QFN Evaluation Kit Remark Samples Tape & Reel
Functional Block Diagram
V CTL V CC0 V RAMP
Bias Generator
Control Circuitry
IN
Stage 1
Interstage Match
Stage 2 OUT
GND
V CC1
Figure 1: PA2423L Block Diagram
GND
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Pin Out Diagram
PA2423L Top View
OUT/VCC2 OUT/VCC2 6
PA2423L Bottom View
VCTL VRAMP
1 2
6
1 2
Die Pad
VCTL VRAMP
5 3 4
VCC1 VCC0
VCC1 VCC0
5 3 IN 4
IN
Figure 2: PA2423L Pin-Out Diagram
Pin Out Description
Pin No. 1 2 3 4 5 6 Die Pad Name VCTL VRAMP IN VCC0 VCC1 OUT/VCC2 GND Description Controls the output level of the power amplifier. An analog control signal between 0V and VCC varies the PA output power between minimum and maximum values Power Amplifier Enable pin. A digital control signal with logic high (power up) and logic low (power down) is used to turn the device on and off. Power amplifier RF input, external input matching network with DC blocking is required Bias supply voltage Stage 1 collector supply voltage, external inter-stage matching network is required PA Output and Stage2 collector supply voltage, external output matching network with DC blocking is required Heatslug Die Pad is ground
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Absolute Maximum Ratings
Operation in excess of any one of above Absolute Maximum Ratings may result in permanent damage. This device is a high performance RF integrated circuit with ESD rating < 600V and is ESD sensitive. Handling and assembly of this device should be at ESD protected workstations.
Symbol VCC VCTL VRAMP IN TA TSTG Tj Supply Voltage Control Voltage Ramping Voltage RF Input Power
Parameter
Min. -0.3 -0.3 -0.3
Max. +3.6 VCC VCC +8
Unit V V V dBm C C C
Operating Temperature Range Storage Temperature Range Maximum Junction Temperature
-40 -40
+85 +150 +150
DC Electrical Characteristics
Conditions: Symbol VCC ICC Supply Voltage Supply Current (ICC = IVCC0 + IVCC1 + IVCC2), VCTL = 3.3 V Supply Current variation over temperature from TA = 25 C (-40 C < TA < +85 C) PA Output Power Control Voltage Range Current sunk by VCTL pin Logic High Voltage Logic Low Voltage Leakage Current when VRAMP = 0 V, VCTL = high, No RF Applied. 1 3 3 1 0.5 2.0 0.8 10 1 VCC0 = VCC1 = VCC2 = VRAMP = 3.3 V, VCTL = 3.3V, PIN = +2 dBm, TA = 25 C, f = 2.45 GHz, input and output externally matched to 50 unless otherwise noted. Parameter Note Min. 2.7 Typ. 3.3 125 Max. 3.6 150 Unit V mA
Icctemp VCTL ICTL VRAMP Istdby
3 0
25 VCC 200 250
% V A V V A
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AC Electrical Characteristics
Conditions: Symbol fL-U POUT Ptemp dPOUT /dVCTL PAE VCC0 = VCC1 = VCC2 = VRAMP = 3.3 V, VCTL = 3.3 V, PIN = +2 dBm, TA = 25 C, f = 2.45 GHz, input and output externally matched to 50 unless otherwise noted. Parameter Frequency Range Output Power @ PIN =+2 dBm, VCTL = 3.3 V Output Power @ PIN =+2 dBm, VCTL = 0.4 V Output Power variation over temperature (-40 C < TA <+85 C) Control Voltage Sensitivity Power Added Efficiency at +22.5 dBm Output Power Gain @ PIN = -22 dBm Gain @ PIN = -10 dBm Gain @ PIN = -6 dBm Gain Variation over band (2400-2500 MHz) Harmonics Isolation in "OFF" State, PIN = +2 dBm, VRAMP = 0V Reverse Isolation Stability (PIN = +2 dBm, Load VSWR = 6:1) 3 3 3, 4 2 2 2 15 32 25.5 25.0 23.5 Note 3 1 1 3 3 45 26.5 25.4 24.0 0.7 -40 20 42 1.0 -35 Min. 2400 20 22.5 -20 1 0 2 120 Typ. Max. 2500 Unit MHz dBm dBm dB dBm/V % dB dB dB dB dBc dB dB
G GVAR 2f,3f,4f,5f IS21 IOFF IS12I STAB
All non-harmonically related outputs less than -50 dBc
Notes: (1) Guaranteed by production test at TA = 25 C. (2) Guaranteed by design only (3) Guaranteed by design and characterization (4) Harmonic levels are greatly affected by topology of external matching networks.
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Typical Performance Characteristics
Test Conditions: SiGe PA2423L-EV: VCC0 = VCC1 = VCC2 = VRAMP = 3.3 V, VCTL = 3.3 V, PIN = +2 dBm, TA = 25 C, f = 2.45 GHz, input and output externally matched to 50 unless otherwise noted
POUT, ICC vs Supply Voltage
24 23 150 142 134 126 118 110 102 94 86 78 70 2.4 2.6 2.8 3 3.2 3.4 3.6
POUT, Gain vs Input Power
25 30 25 20 15 10 5 -28 -24 -20 -16 -12 -8 -4 0 4 8
Output Power (dBm)
22 21 20 19 18 17 16 15 14
Supply current (mA)
Output Power (dBm)
20 15 10 5 0
Input Power (dBm)
Pout Gain
VCC(V)
Pout Icc
(a)
(b)
Figure 3: (a) POUT, ICC vs. Supply Voltage, (b) POUT, Gain vs. Input Power
PAE vs Input Power
50 45 40 23.0 22.5 22.0 21.5 21.0 20.5 20.0 19.5 19.0 18.5
POUT, ICC vs Frequency
135 130 125 120 115 110 105 100 95 90
POUT (dBm)
PAE (%)
30 25 20 15 10 5 0 -28 -24 -20 -16 -12 -8 -4 0 4
18.0 85 2.25 2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65
Frequency (GHz)
Pout Icc
Input Power(dBm)
(a)
(b)
Figure 4: (a) PAE vs. Input Power, (b) POUT, ICC vs. Frequency
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ICC (mA)
35
Gain (dB)
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RangeChargerTM 2.4 GHz Power Amplifier IC Final
POUT vs Control Voltage
ICC vs Control Voltage
140 120
25 20
Supply Current (mA)
Output Power dBm)
15 10 5 0 -5 -10 -15 -20 -25
100 80 60 40 20 0 0.4 0.9 1.4
0.4
0.9
1.4
1.9
2.4
2.9
3.4
VCTL (V)
Pin=0dBm
1.9
2.4
2.9
3.4
VCTL(V)
Pin=-4dBm Pin=0dBm Pin=+2dBm
Pin=-4dBm
Pin=+2dBm
(a)
(b)
Figure 5: (a) ICC vs. VCTL over Input Power, (b) POUT vs. VCTL over Input Power
Output Spectrum
30 20 22.16 10 0
30 20 10 0 -10 -20 -30 -40 -50 -60
Output spectrum with BT modulated signal
POUT (dBm)
POUT (dBm)
-10 -20 -30 -40 -50 1 3 5 7 9 11 13 -23.83
2.4475
2.4485
2.4495
2.4505
2.4515
2.4525
Frequency (GHz)
Frequency (GHz)
(a) (b)
Figure 6: (a) Output Spectrum, (b) Output Spectrum with BT modulated signal
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Applications Information
For test and design purposes, SiGe Semiconductor offers an evaluation board for the PA2423L. The order part number for the evaluation board is PA2423L-EV. The evaluation board is intended to simplify the testing with respect to RF performance of this power amplifier. The application note, 13-APP-01 provides the supporting information for using the evaluation board. It contains information on the schematic, bill of materials and recommended layout for the power amplifier and the input and output matching networks. To assist in the design process, this layout is available, upon request, in gerber file format. Using VRAMP VRAMP is a digital pin used to power-up and power-down the PA2423L in Time Duplex systems such as BluetoothTM 1.1. During receive mode, VRAMP voltage is pulled down, PA2423L acts as a 25 dB isolation block between the radio and the antenna while consuming a modest 1 A. In transmit mode, VRAMP voltage is pulled to VCC and PA2423L offers 19 dB to 21 dB of large signal gain. The rise and fall time are in the order of 1-2 sec. Using VCTL VCTL is an analog pin that is designed to control the gain of PA2423L. Applying a voltage between 0 V and VCC will adjust the gain between -15 dB and 21 dB. Used in combination with a variable drive level to PA2423L, the VCTL TM function can greatly optimize the PAE of the system at all four Bluetooth transmitted power levels. By applying approximately 1.4 V to VCTL, for example, a Class1 radio can be modified to a Class2 radio with the PA2423L consuming only 15 mA. By implementing a resistor DAC, the VCTL pin can interface with BluetoothTM transceivers offering digital and programmable outputs.
Package Dimensions
The PA2423L is packaged in a 1.6 mm x 3.0 mm 6 lead QFN package. The underside of the package is an exposed die-pad structure. This allows for direct soldering to the PCB for enhanced thermal conductivity. The package dimensions are shown in the drawing below.
Figure 7: PA2423L Package Drawing
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Tape and Reel Information
Parameter Reel Diameter Reel Width Units per Reel Value 7 inches 8 mm 3000
Figure 8: PA2423L Tape and Reel Diagram
Product Branding Information
Part Number Pin 1
Lot Code
2423L Lot Code
Figure 9: PA2423L Product Branding Information (Top View)
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PA2423L 6-QFN PCB Footprint Layout
Figure 10: PA2423L PCB Footprint Layout
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Product Preview The datasheet contains information from the product concept specification. SiGe Semiconductor, Inc. reserves the right to change information at any time without notification. Preliminary Information The datasheet contains information from the design target specification. SiGe Semiconductor, Inc. reserves the right to change information at any time without notification. Production testing may not include testing of all parameters. Information furnished is believed to be accurate and reliable and is provided on an "as is" basis. SiGe Semiconductor, Inc. assumes no responsibility or liability for the direct or indirect consequences of use of such information nor for any infringement of patents or other rights of third parties, which may result from its use. No license or indemnity is granted by implication or otherwise under any patent or other intellectual property rights of SiGe Semiconductor, Inc. or third parties. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SiGe Semiconductor, Inc. products are NOT authorized for use in implantation or life support applications or systems without express written approval from SiGe Semiconductor, Inc. RangeCharger , StreamCharger , and PointCharger Copyright 2006 SiGe Semiconductor, Inc. All Rights Reserved
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